Peter Breitschopf, M.Eng.

Lab Engineer

E 219

0991/3615-576

0991/3615-599


Zeitschriftenartikel
  • R. Biberger
  • Günther Benstetter
  • T. Schweinböck
  • Peter Breitschopf
  • H. Göbel
Intermittent-contact scanning capacitance microscopy versus contact mode SCM applied to 2D dopant profiling, vol. 48 (8-9), pg. 1339-1349.

In: Microelectronics Reliability

  • 2008

This study compares two different methods of scanning capacitance microscopy (SCM). The first and approved one operates in contact mode and the second novel one in intermittent-contact (IC) mode. Measurements were performed on several samples and the results are compared. New technical expertises on the novel intermittent-contact method are shown and in conclusion assets and drawbacks of this SCM method are emphasized.
  • Elektrotechnik und Medientechnik
  • IQMA
Vortrag
  • Günther Benstetter
  • Werner Frammelsberger
  • Edgar Lodermeier
  • Heiko Ranzinger
  • D. Liu
  • Peter Breitschopf
  • W. Bergbauer
  • Alexander Hofer
Raster-Sonden-Mikroskopie (SPM) in der Fehler- und Zuverlässigkeitsanalytik

In: VDE Fehlermechanismen bei kleinen Geometrien

  • 2006
  • Elektrotechnik und Medientechnik
  • IQMA
  • Maschinenbau und Mechatronik
Vortrag
  • Günther Benstetter
  • Peter Breitschopf
  • B. Knoll
  • Werner Frammelsberger
Intermittent contact scanning capacitance microscopy – An improved method for 2D doping profiling

In: Nanotech Northern Europe

  • 2006
  • Maschinenbau und Mechatronik
  • Elektrotechnik und Medientechnik
  • IQMA
Vortrag
  • Günther Benstetter
  • Peter Breitschopf
  • B. Knoll
  • Edgar Lodermeier
  • Alexander Hofer
  • Werner Frammelsberger
Intermittent Contact Scanning Capacitance Microscopy-First Results

In: Workshop on Scanning Probe Microscopy and Related Techniques

  • 2005
  • Elektrotechnik und Medientechnik
  • Maschinenbau und Mechatronik
  • IQMA
Zeitschriftenartikel
  • Peter Breitschopf
  • Günther Benstetter
  • B. Knoll
  • Werner Frammelsberger
Intermittent contact scanning capacitance microscopy-A novel method for 2D doping profiling, vol. 45, pg. 1568-1571.

In: Microelectronics Reliability

  • 2005
In the present study an improved method for 2D doping profiling of semiconductor device structures is presented. The method combines the capabilities of scanning capacitance microscopy (SCM) with the advantages of intermittent contact atomic force microscopy (IC-AFM) and is called intermittent contact scanning capacitance microscopy (IC-SCM). Compared with standard SCM, IC-SCM provides mechanically stable measurement conditions because tip wear is nearly eliminated. Furthermore, background signals without local information are suppressed by demodulating the SCM signal at higher harmonics of the tapping tip frequency. Both, reduced tip wear and higher harmonics demodulation yield improved spatial image resolution at less tip degradation compared with standard SCM.
  • IQMA
  • Elektrotechnik und Medientechnik
  • Maschinenbau und Mechatronik
Vortrag
  • Peter Breitschopf
  • Günther Benstetter
  • B. Knoll
  • Werner Frammelsberger
Intermittent contact scanning capacitance microscopy-A novel method for 2D doping profiling

In: 16th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)

  • 2005
  • Maschinenbau und Mechatronik
  • Elektrotechnik und Medientechnik
  • IQMA
Zeitschriftenartikel
  • Günther Benstetter
  • Peter Breitschopf
  • Werner Frammelsberger
  • Heiko Ranzinger
  • P. Reislhuber
  • T. Schweinböck
AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis, vol. 44, pg. 1615-1619.

In: Microelectronics Reliability

  • 2004

DOI: 10.1016/j.microrel.2004.07.079

  • Maschinenbau und Mechatronik
  • IQMA
  • Elektrotechnik und Medientechnik
Vortrag
  • T. Schweinböck
  • S. Schömann
  • D. Alvarez
  • M. Buzzu
  • Günther Benstetter
  • Werner Frammelsberger
  • Peter Breitschopf
New Trends in the application of scanning probe techniques in failure analysis

In: 15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)

  • 2004
  • IQMA
  • Maschinenbau und Mechatronik
  • Elektrotechnik und Medientechnik
Vortrag
  • Günther Benstetter
  • Werner Frammelsberger
  • D. Liu
  • Peter Breitschopf
Failure analysis of deep sub-micron semiconductor structures and thin films with atomic force microscopy methods

In: First International conference on Engineering Failure Analysis (ICEFA)

  • 2004
  • Maschinenbau und Mechatronik
  • Elektrotechnik und Medientechnik
  • IQMA
Vortrag
  • Günther Benstetter
  • Peter Breitschopf
  • Werner Frammelsberger
  • Heiko Ranzinger
  • P. Reislhuber
  • T. Schweinböck
AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis

In: 15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)

  • 2004
  • Maschinenbau und Mechatronik
  • IQMA
  • Elektrotechnik und Medientechnik
Zeitschriftenartikel
  • T. Schweinböck
  • S. Schömann
  • D. Alvarez
  • M. Buzzu
  • Günther Benstetter
  • Werner Frammelsberger
  • Peter Breitschopf
New Trends in the application of scanning probe techniques in failure analysis, vol. 44, pg. 1541-1546.

In: Microelectronics Reliability

  • 2004

DOI: 10.1016/j.microrel.2004.07.037

  • Maschinenbau und Mechatronik
  • Elektrotechnik und Medientechnik
  • IQMA
Vortrag
  • Werner Frammelsberger
  • Günther Benstetter
  • T. Schweinböck
  • R. Stamp
  • J. Kiely
  • Peter Breitschopf
Atomic Force Microscopy Studies of Thin and Ultra-thin SiO2 Films. Final Report

In: 2nd VDE World Microtechnologies Congress

  • 2003
  • Elektrotechnik und Medientechnik
  • Maschinenbau und Mechatronik
  • IQMA